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Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing
Controlled doping with an effective carrier concentration higher than 10(20) cm(−3) is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the e...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7143048/ https://ncbi.nlm.nih.gov/pubmed/32244923 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13061408 |
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