Prucnal, S., Żuk, J., Hübner, R., Duan, J., Wang, M., Pyszniak, K., . . . Zhou, S. (2020). Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing. Materials (Basel).
Style de citation ChicagoPrucnal, Slawomir, Jerzy Żuk, René Hübner, Juanmei Duan, Mao Wang, Krzysztof Pyszniak, Andrzej Drozdziel, Marcin Turek, et Shengqiang Zhou. "Electron Concentration Limit in Ge Doped By Ion Implantation and Flash Lamp Annealing." Materials (Basel) 2020.
Style de citation MLAPrucnal, Slawomir, et al. "Electron Concentration Limit in Ge Doped By Ion Implantation and Flash Lamp Annealing." Materials (Basel) 2020.
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