APA引用形式

Prucnal, S., Żuk, J., Hübner, R., Duan, J., Wang, M., Pyszniak, K., . . . Zhou, S. (2020). Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing. Materials (Basel).

シカゴスタイル引用形

Prucnal, Slawomir, Jerzy Żuk, René Hübner, Juanmei Duan, Mao Wang, Krzysztof Pyszniak, Andrzej Drozdziel, Marcin Turek, , Shengqiang Zhou. "Electron Concentration Limit in Ge Doped By Ion Implantation and Flash Lamp Annealing." Materials (Basel) 2020.

MLA引用形式

Prucnal, Slawomir, et al. "Electron Concentration Limit in Ge Doped By Ion Implantation and Flash Lamp Annealing." Materials (Basel) 2020.