Prucnal, S., Żuk, J., Hübner, R., Duan, J., Wang, M., Pyszniak, K., . . . Zhou, S. (2020). Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing. Materials (Basel).

Prucnal, Slawomir, Jerzy Żuk, René Hübner, Juanmei Duan, Mao Wang, Krzysztof Pyszniak, Andrzej Drozdziel, Marcin Turek, και Shengqiang Zhou. "Electron Concentration Limit in Ge Doped By Ion Implantation and Flash Lamp Annealing." Materials (Basel) 2020.

Prucnal, Slawomir, et al. "Electron Concentration Limit in Ge Doped By Ion Implantation and Flash Lamp Annealing." Materials (Basel) 2020.