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Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electro...

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Foilsithe in:Micromachines (Basel)
Main Authors: Volovlikova, Olga, Gavrilov, Sergey, Lazarenko, Petr
Formáid: Artigo
Teanga:Inglês
Foilsithe: MDPI 2020
Ábhair:
Rochtain Ar Líne:https://ncbi.nlm.nih.gov/pmc/articles/PMC7074670/
https://ncbi.nlm.nih.gov/pubmed/32075147
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11020199
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