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Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level
The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electro...
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| Foilsithe in: | Micromachines (Basel) |
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| Main Authors: | , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI
2020
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7074670/ https://ncbi.nlm.nih.gov/pubmed/32075147 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11020199 |
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