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GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes

InPBi exhibits broad and strong photoluminescence at room temperature, and is a potential candidate for fabricating super-luminescence diodes applied in optical coherence tomography. In this paper, the strained InPBi quantum dot (QD) embedded in the AlGaAs barrier on a GaAs platform is proposed to e...

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Detalhes bibliográficos
Publicado no:Int J Mol Sci
Main Authors: Zhang, Liyao, Song, Yuxin, Gong, Qian
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6929012/
https://ncbi.nlm.nih.gov/pubmed/31795220
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ijms20236001
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