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Impact of Line Edge Roughness on ReRAM Uniformity and Scaling
We investigate the effects of Line Edge Roughness (LER) of electrode lines on the uniformity of Resistive Random Access Memory (ReRAM) device areas in cross-point architectures. To this end, a modeling approach is implemented based on the generation of 2D cross-point patterns with predefined and con...
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| Vydáno v: | Materials (Basel) |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6926851/ https://ncbi.nlm.nih.gov/pubmed/31801205 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12233972 |
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