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Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels
[Image: see text] Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and log...
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| Yayımlandı: | ACS Omega |
|---|---|
| Asıl Yazarlar: | , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
American Chemical Society
2019
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| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6906765/ https://ncbi.nlm.nih.gov/pubmed/31858043 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.9b02513 |
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