Neuper, F., Chandresh, A., Singaraju, S. A., Aghassi-Hagmann, J., Hahn, H., & Breitung, B. (2019). Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels. ACS Omega.
Citación estilo ChicagoNeuper, Felix, Abhinav Chandresh, Surya Abhishek Singaraju, Jasmin Aghassi-Hagmann, Horst Hahn, y Ben Breitung. "Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors By Chromium Doping of Indium Oxide Channels." ACS Omega 2019.
Cita MLANeuper, Felix, et al. "Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors By Chromium Doping of Indium Oxide Channels." ACS Omega 2019.
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