GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperatu...

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Publicado en:Sci Rep
Main Authors: Ballabio, Andrea, Bietti, Sergio, Scaccabarozzi, Andrea, Esposito, Luca, Vichi, Stefano, Fedorov, Alexey, Vinattieri, Anna, Mannucci, Cosimo, Biccari, Francesco, Nemcsis, Akos, Toth, Lajos, Miglio, Leo, Gurioli, Massimo, Isella, Giovanni, Sanguinetti, Stefano
Formato: Artigo
Idioma:Inglês
Publicado: Nature Publishing Group UK 2019
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Article
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC6879494/
https://ncbi.nlm.nih.gov/pubmed/31772248
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53949-x
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