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Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy
We present a systematic study of surface band bending in Ga-polar n-GaN with different Si doping concentrations by angular dependent X-ray photoelectron spectroscopy (ADXPS). The binding energies of Ga 3d and N 1 s core levels in n-GaN films increase with increasing the emission angle, i. e., the pr...
Enregistré dans:
| Publié dans: | Sci Rep |
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| Auteurs principaux: | , , , , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group UK
2019
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6861320/ https://ncbi.nlm.nih.gov/pubmed/31740691 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53236-9 |
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