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High-electron-mobility (370 cm(2)/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
High-electron-mobility polycrystalline Ge (poly-Ge) thin films are difficult to form because of their poor crystallinity, defect-induced acceptors and low solid solubility of n-type dopants. Here, we found that As doping into amorphous Ge significantly influenced the subsequent solid-phase crystalli...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6851082/ https://ncbi.nlm.nih.gov/pubmed/31719607 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53084-7 |
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