Cita APA

Saito, M., Moto, K., Nishida, T., Suemasu, T., & Toko, K. (2019). High-electron-mobility (370 cm(2)/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization. Sci Rep.

Citación estilo Chicago

Saito, M., K. Moto, T. Nishida, T. Suemasu, and K. Toko. "High-electron-mobility (370 cm(2)/Vs) Polycrystalline Ge On an Insulator Formed By As-doped Solid-phase Crystallization." Sci Rep 2019.

Cita MLA

Saito, M., et al. "High-electron-mobility (370 cm(2)/Vs) Polycrystalline Ge On an Insulator Formed By As-doped Solid-phase Crystallization." Sci Rep 2019.

Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.