Yüklüyor......
Improving carrier mobility of polycrystalline Ge by Sn doping
To improve the performance of electronic devices, extensive research efforts have recently focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn composition x (0 ≤ x ≤ 0.12) and deposition temperature T(d) (50 ≤ T(d) ≤ 200 °C) of the Ge(1−x)Sn(x) precursor aff...
Kaydedildi:
| Yayımlandı: | Sci Rep |
|---|---|
| Asıl Yazarlar: | , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Publishing Group UK
2018
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6172198/ https://ncbi.nlm.nih.gov/pubmed/30287869 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33161-z |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|