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Improving carrier mobility of polycrystalline Ge by Sn doping
To improve the performance of electronic devices, extensive research efforts have recently focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn composition x (0 ≤ x ≤ 0.12) and deposition temperature T(d) (50 ≤ T(d) ≤ 200 °C) of the Ge(1−x)Sn(x) precursor aff...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6172198/ https://ncbi.nlm.nih.gov/pubmed/30287869 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33161-z |
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