Carregant...

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfO(x)-Based Memristive Devices

Oxygen ions’ migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT). However, the lack of experimental evidence observ...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Nanomaterials (Basel)
Autors principals: Wang, Dong, Yan, Shaoan, Chen, Qilai, He, Qiming, Xiao, Yongguang, Tang, Minghua, Zheng, Xuejun
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2019
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6836033/
https://ncbi.nlm.nih.gov/pubmed/31546659
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9101355
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!