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Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating t...
שמור ב:
| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2019
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6794337/ https://ncbi.nlm.nih.gov/pubmed/31617005 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3162-0 |
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