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Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating t...

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Bibliografische gegevens
Gepubliceerd in:Nanoscale Res Lett
Hoofdauteurs: Xiao, Xian-Bo, Ye, Qian, Liu, Zheng-Fang, Wu, Qing-Ping, Li, Yuan, Ai, Guo-Ping
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Springer US 2019
Onderwerpen:
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6794337/
https://ncbi.nlm.nih.gov/pubmed/31617005
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3162-0
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