Ge(1−x)Sn(x) alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy co...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Eales, Timothy D., Marko, Igor P., Schulz, Stefan, O’Halloran, Edmond, Ghetmiri, Seyed, Du, Wei, Zhou, Yiyin, Yu, Shui-Qing, Margetis, Joe, Tolle, John, O’Reilly, Eoin P., Sweeney, Stephen J.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2019
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6773784/
https://ncbi.nlm.nih.gov/pubmed/31575881
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-50349-z
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