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Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 μm to show the potential of the GeSn materials in short-wave infrared photonics23. However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is ne...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Huong Tran, Callum G. Littlejohns, David J. Thomson, Thach Pham, Amir Ghetmiri, Aboozar Mosleh, Joe Margetis, John Tolle, Goran Z. Mashanovich, Wei Du, Baohua Li, Mansour Mortazavi, Shui-Qing Yu
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Frontiers Media S.A. 2019-11-01
Saila:Frontiers in Materials
Gaiak:
Sarrera elektronikoa:https://www.frontiersin.org/article/10.3389/fmats.2019.00278/full
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