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Radiation Response of Negative Gate Biased SiC MOSFETs
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFETs with applying the gate bias is of interest, in t...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Materials (Basel) |
|---|---|
| Prif Awduron: | , , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI
2019
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6747762/ https://ncbi.nlm.nih.gov/pubmed/31461860 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12172741 |
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