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Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe(2) Field-Effect Transistors
We investigated the electrical and optoelectronic characteristics of ambipolar WSe(2) field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe(2) surface, which ensured highe...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6742682/ https://ncbi.nlm.nih.gov/pubmed/31515651 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3137-1 |
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