Yüklüyor......
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe(2) Field-Effect Transistors
We investigated the electrical and optoelectronic characteristics of ambipolar WSe(2) field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe(2) surface, which ensured highe...
Kaydedildi:
| Yayımlandı: | Nanoscale Res Lett |
|---|---|
| Asıl Yazarlar: | , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Springer US
2019
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6742682/ https://ncbi.nlm.nih.gov/pubmed/31515651 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3137-1 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|