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Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resoluti...
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| Vydáno v: | Nano Lett |
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| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7259612/ https://ncbi.nlm.nih.gov/pubmed/30673247 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.8b04865 |
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