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Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applica...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2019
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6695932/ https://ncbi.nlm.nih.gov/pubmed/31390722 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12152487 |
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