טוען...
Ionization-induced annealing of pre-existing defects in silicon carbide
A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. It...
שמור ב:
| הוצא לאור ב: | Nat Commun |
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| Main Authors: | , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Pub. Group
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4557342/ https://ncbi.nlm.nih.gov/pubmed/26264864 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9049 |
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