Llwytho...
Ionization-induced annealing of pre-existing defects in silicon carbide
A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. It...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Nat Commun |
|---|---|
| Prif Awduron: | , , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Nature Pub. Group
2015
|
| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4557342/ https://ncbi.nlm.nih.gov/pubmed/26264864 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9049 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|