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Ionization-induced annealing of pre-existing defects in silicon carbide
A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. It...
Uloženo v:
| Vydáno v: | Nat Commun |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Pub. Group
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4557342/ https://ncbi.nlm.nih.gov/pubmed/26264864 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9049 |
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