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Nonlinear optical imaging of defects in cubic silicon carbide epilayers
Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrat...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2014
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4052718/ https://ncbi.nlm.nih.gov/pubmed/24918841 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05258 |
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