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Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detec...
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| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5501800/ https://ncbi.nlm.nih.gov/pubmed/28687789 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05010-y |
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