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Nonlinear optical imaging of defects in cubic silicon carbide epilayers
Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrat...
में बचाया:
| मुख्य लेखकों: | , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group
2014
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4052718/ https://ncbi.nlm.nih.gov/pubmed/24918841 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05258 |
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