Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN layer into the n-AlGaN electron supplier laye...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Nanoscale Res Lett
Prif Awduron: Che, Jiamang, Shao, Hua, Kou, Jianquan, Tian, Kangkai, Chu, Chunshuang, Hou, Xu, Zhang, Yonghui, Sun, Qian, Zhang, Zi-Hui
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Springer US 2019
Pynciau:
Nano Express
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC6684732/
https://ncbi.nlm.nih.gov/pubmed/31388778
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3078-8
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

Eitemau Tebyg