On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes

In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. The electron leakage arises from the unbalanced ele...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Hao-Chung Kuo
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2020-01-01
coleção:	IEEE Photonics Journal
Assuntos:	DUV LED efficiency droop electron leakage Auger recombination
Acesso em linha:	https://ieeexplore.ieee.org/document/9099624/
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!