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Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire
The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention fro...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6669601/ https://ncbi.nlm.nih.gov/pubmed/31284558 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9070981 |
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