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Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition
[Image: see text] The characteristics of copper (Cu) isotropic dry etching using a hydrogen-based plasma generated at 13.3 kPa (100 Torr) were improved dramatically by simply introducing a moderate amount of N(2) gas into the process atmosphere. A maximum Cu etch rate of 2.4 μm/min was obtained by n...
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| Foilsithe in: | ACS Omega |
|---|---|
| Main Authors: | , , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
American Chemical Society
2019
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| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6648018/ https://ncbi.nlm.nih.gov/pubmed/31459637 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b03163 |
| Clibeanna: |
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