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Memristors Using Solution-Based IGZO Nanoparticles
[Image: see text] Solution-based indium–gallium–zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal–insulator–metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low...
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| Veröffentlicht in: | ACS Omega |
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| Hauptverfasser: | , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
American Chemical Society
2017
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| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6644988/ https://ncbi.nlm.nih.gov/pubmed/31457375 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b01167 |
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