Načítá se...
Memristors Using Solution-Based IGZO Nanoparticles
[Image: see text] Solution-based indium–gallium–zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal–insulator–metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low...
Uloženo v:
| Vydáno v: | ACS Omega |
|---|---|
| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
American Chemical Society
2017
|
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6644988/ https://ncbi.nlm.nih.gov/pubmed/31457375 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b01167 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|