טוען...
Improved electrical performance of a sol–gel IGZO transistor with high-k Al(2)O(3) gate dielectric achieved by post annealing
We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al(2)O(3) bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variati...
שמור ב:
| הוצא לאור ב: | Nano Converg |
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| Main Authors: | , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer Singapore
2019
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6643007/ https://ncbi.nlm.nih.gov/pubmed/31328241 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s40580-019-0194-1 |
| תגים: |
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