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Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics

The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Byeon, Hye-Hyeon, Kim, Kein, Kim, Woong, Yi, Hyunjung
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group UK 2017
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5519712/
https://ncbi.nlm.nih.gov/pubmed/28729686
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06000-w
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