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Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism
[Image: see text] We demonstrate controlled fabrication of porous Si (PS) and vertically aligned silicon nanowires array starting from bulk silicon wafer by simple chemical etching method, and the underlying mechanism of nanostructure formation is presented. Silicon-oxidation rate and the electron-s...
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| Foilsithe in: | ACS Omega |
|---|---|
| Main Authors: | , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
American Chemical Society
2017
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| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6641903/ https://ncbi.nlm.nih.gov/pubmed/31457746 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b00584 |
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