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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si(1−x)Ge(x) Thin-Film Transistors
We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si(1−x)Ge(x)) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH(4) and GeH(4) gas mixture, and a Si(1−x)Ge(x) thin film was crystallized using...
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| Publié dans: | Materials (Basel) |
|---|---|
| Auteurs principaux: | , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI
2019
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6600783/ https://ncbi.nlm.nih.gov/pubmed/31146346 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12111739 |
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