Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with comple...

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Detalles Bibliográficos
Publicado en:Micromachines (Basel)
Autores principales: Nozaki, Takayuki, Yamamoto, Tatsuya, Miwa, Shinji, Tsujikawa, Masahito, Shirai, Masafumi, Yuasa, Shinji, Suzuki, Yoshishige
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI 2019
Materias:
Review
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC6562605/
https://ncbi.nlm.nih.gov/pubmed/31096668
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10050327
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