Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with comple...

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Detalhes bibliográficos
Publicado no:Micromachines (Basel)
Main Authors: Nozaki, Takayuki, Yamamoto, Tatsuya, Miwa, Shinji, Tsujikawa, Masahito, Shirai, Masafumi, Yuasa, Shinji, Suzuki, Yoshishige
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Review
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6562605/
https://ncbi.nlm.nih.gov/pubmed/31096668
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10050327
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