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Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage

In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of the different gate insulator (GI) materials and the scalings of GI th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Sci Rep
Hauptverfasser: Kuo, Po-Yi, Chang, Chien-Min, Liu, I-Han, Liu, Po-Tsun
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group UK 2019
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6527572/
https://ncbi.nlm.nih.gov/pubmed/31110283
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-44131-4
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