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Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage
In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of the different gate insulator (GI) materials and the scalings of GI th...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6527572/ https://ncbi.nlm.nih.gov/pubmed/31110283 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-44131-4 |
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