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Structure and Dielectric Property of High-k ZrO(2) Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone
High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO(2) films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively constant deposition rate of 0.125 nm/cycle is...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6505036/ https://ncbi.nlm.nih.gov/pubmed/31065821 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2989-8 |
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