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Dielectric Enhancement of Atomic Layer-Deposited Al(2)O(3)/ZrO(2)/Al(2)O(3) MIM Capacitors by Microwave Annealing
For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature size. In this work, the microwave annealing technique is investigated to enhance the diele...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6370895/ https://ncbi.nlm.nih.gov/pubmed/30742246 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2874-5 |
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