:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distr...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Chen, Changdong, Yang, Bo‐Ru, Li, Gongtan, Zhou, Hang, Huang, Bolong, Wu, Qian, Zhan, Runze, Noh, Yong‐Young, Minari, Takeo, Zhang, Shengdong, Deng, Shaozhi, Sirringhaus, Henning, Liu, Chuan
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2019
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6446738/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201970040
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