Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

For newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. Here, large‐area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in t...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Chen, Changdong, Yang, Bo‐Ru, Li, Gongtan, Zhou, Hang, Huang, Bolong, Wu, Qian, Zhan, Runze, Noh, Yong‐Young, Minari, Takeo, Zhang, Shengdong, Deng, Shaozhi, Sirringhaus, Henning, Liu, Chuan
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2019
Assuntos:
Communications
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6446609/
https://ncbi.nlm.nih.gov/pubmed/30989018
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201801189
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