:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distr...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Adv Sci (Weinh)
Autors principals: Chen, Changdong, Yang, Bo‐Ru, Li, Gongtan, Zhou, Hang, Huang, Bolong, Wu, Qian, Zhan, Runze, Noh, Yong‐Young, Minari, Takeo, Zhang, Shengdong, Deng, Shaozhi, Sirringhaus, Henning, Liu, Chuan
Format: Artigo
Idioma:Inglês
Publicat: John Wiley and Sons Inc. 2019
Matèries:
Frontispiece
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6446738/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201970040
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars