Φορτώνει......
:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)
In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distr...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Adv Sci (Weinh) |
|---|---|
| Κύριοι συγγραφείς: | , , , , , , , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
John Wiley and Sons Inc.
2019
|
| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6446738/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201970040 |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|