:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distr...

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Bibliografiske detaljer
Udgivet i:Adv Sci (Weinh)
Main Authors: Chen, Changdong, Yang, Bo‐Ru, Li, Gongtan, Zhou, Hang, Huang, Bolong, Wu, Qian, Zhan, Runze, Noh, Yong‐Young, Minari, Takeo, Zhang, Shengdong, Deng, Shaozhi, Sirringhaus, Henning, Liu, Chuan
Format: Artigo
Sprog:Inglês
Udgivet: John Wiley and Sons Inc. 2019
Fag:
Frontispiece
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6446738/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201970040
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