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Simulation of Field Assisted Sintering of Silicon Germanium Alloys
We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the...
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| Vydáno v: | Materials (Basel) |
|---|---|
| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6416796/ https://ncbi.nlm.nih.gov/pubmed/30769820 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12040570 |
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