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Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and ene...

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Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Struct Dyn
Egile Nagusiak: Zürch, Michael, Chang, Hung-Tzu, Kraus, Peter M., Cushing, Scott K., Borja, Lauren J., Gandman, Andrey, Kaplan, Christopher J., Oh, Myoung Hwan, Prell, James S., Prendergast, David, Pemmaraju, Chaitanya D., Neumark, Daniel M., Leone, Stephen R.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: American Crystallographic Association 2017
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5461173/
https://ncbi.nlm.nih.gov/pubmed/28653020
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4985056
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