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Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and ene...

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Bibliografiske detaljer
Udgivet i:Struct Dyn
Main Authors: Zürch, Michael, Chang, Hung-Tzu, Kraus, Peter M., Cushing, Scott K., Borja, Lauren J., Gandman, Andrey, Kaplan, Christopher J., Oh, Myoung Hwan, Prell, James S., Prendergast, David, Pemmaraju, Chaitanya D., Neumark, Daniel M., Leone, Stephen R.
Format: Artigo
Sprog:Inglês
Udgivet: American Crystallographic Association 2017
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Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5461173/
https://ncbi.nlm.nih.gov/pubmed/28653020
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4985056
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