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Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of t...
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| Publicado en: | Nanomaterials (Basel) |
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| Autores principales: | , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6410279/ https://ncbi.nlm.nih.gov/pubmed/30791401 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9020289 |
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